国家/地区 Taiwan（4）
关键词
出版物 APPLIED PHYSICS AMA.（2）
出版时间 2015（4）
机构 NATL CHANGHUA UNIV EDUC（4）
作者 LIN YJ（4）

Correlation between phonon and impurity scatterings, potential fluctuations and leakage conduction of graphene/n-type Si Schottky diodes

SUPERLATTICES MICROSTRUCTURES

LIN YJ

Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

TSAI CL, LIN YJ, LIN JH

Temperature-dependent electrical properties for graphene Schottky contact on n-type Si with and without sulfide treatment

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

LIN YJ, ZENG JJ, CHANG HC

Tuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

LIN JH, LIN YJ, CHANG HC