国家/地区 Usa（8）
关键词 GRAPHENE（4） MONOLAYER（2）
出版物 APPLIED PHYSICS LETTERS（8）
出版时间 2010（2） 2015（2）
机构 UNIV TEXAS A.（3） GEORGIA INST.（2）
作者 KIM S（8）

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

APPLIED PHYSICS LETTERS

KIM S, LUISIER M, BOYKIN TB, KLIMECK G

Scaling of Al2O3 dielectric for graphene field-effect transistors

APPLIED PHYSICS LETTERS

FALLAHAZAD B, LEE K, LIAN G, KIM S, CORBET CM, FERRER DA, COLOMBO L, TUTUC E

Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric

APPLIED PHYSICS LETTERS

FALLAHAZAD B, KIM S, COLOMBO L, TUTUC E

Visibility and Raman spectroscopy of mono and bilayer graphene on crystalline silicon

APPLIED PHYSICS LETTERS

SONG EB, LIAN B, XU GY, YUAN B, ZENG CF, CHEN A, WANG MS, KIM S, LANG MR, ZHOU Y, WANG KL

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

APPLIED PHYSICS LETTERS

KIM S, NAH J, JO I, SHAHRJERDI D, COLOMBO L, YAO Z, TUTUC E, BANERJEE SK

Placing single atoms in graphene with a scanning transmission electron microscope

APPLIED PHYSICS LETTERS

DYCK O, KIM S, KALININ SV, JESSE S

Using an energized oxygen micro-jet for improved graphene etching by focused electron beam

APPLIED PHYSICS LETTERS

KIM S, HENRY M, FEDOROV AG

Localized conductive patterning via focused electron beam reduction of graphene oxide

APPLIED PHYSICS LETTERS

KIM S, KULKARNI DD, HENRY M, ZACKOWSKI P, JANG SS, TSUKRUK VV, FEDOROV AG