国家/地区 Usa（6）
关键词 GRAPHENE（2）
出版物 APPLIED PHYSICS LET.（3）
出版时间 2014（2）
机构 GEORGE MASON.（3）
作者 KOEHLER AD（6）

Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process

APPLIED PHYSICS LETTERS

NATH A, KOEHLER AD, JERNIGAN GG, WHEELER VD, HITE JK, HERNANDEZ SC, ROBINSON ZR, GARCES NY, MYERSWARD RL, EDDY CR, GASKILL DK, RAO MV

Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC

APPLIED PHYSICS LETTERS

TADJER MJ, ANDERSON TJ, MYERSWARD RL, WHEELER VD, NYAKITI LO, ROBINSON Z, EDDY CR, GASKILL DK, KOEHLER AD, HOBART KD, KUB FJ

Investigation of the Epitaxial Graphene/p-SiC Heterojunction

IEEE ELECTRON DEVICE LETTERS

ANDERSON TJ, HOBART KD, NYAKITI LO, WHEELER VD, MYERSWARD RL, CALDWELL JD, BEZARES FJ, JERNIGAN GG, TADJER MJ, IMHOFF EA, KOEHLER AD, GASKILL DK, EDDY CR, KUB FJ

Universal conformal ultrathin dielectrics on epitaxial graphene enabled by a graphene oxide seed layer

APPLIED PHYSICS LETTERS

NATH A, KONG BD, KOEHLER AD, ANDERSON VR, WHEELER VD, DANIELS KM, BOYD AK, CLEVELAND ER, MYERSWARD RL, GASKILL DK, HOBART KD, KUB FJ, JERNIGAN GG

In search of quantum-limited contact resistance: understandingthe intrinsic and extrinsic effects on the graphene-metal interface

2D MATERIALS

NATH A, CURRIE M, BOYD AK, WHEELER VD, KOEHLER AD, TADJER MJ, ROBINSON ZR, SRIDHARA K, HERNANDEZ SC, WOLLMERSHAUSER JA, ROBINSON JT, MYERSWARD RL, RAO MV, GASKILL DK

Ultraviolet detector based on graphene/SiC heterojunction

APPLIED PHYSICS EXPRESS

ANDERSON TJ, HOBART KD, GREENLEE JD, SHAHIN DI, KOEHLER AD, TADJER MJ, IMHOFF EA, MYERSWARD RL, CHRISTOU A, KUB FJ