国家/地区 Usa（3）
关键词
出版物 JOURNAL OF VACUUM S.（2）
出版时间
机构 UNIV NOTRE DAME（3）
作者 MYERSWARD RL（3）

Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

HWANG WS, TAHY K, ZHAO P, NYAKITI LO, WHEELER VD, MYERSWARD RL, EDDY CR, GASKILL DK, XING H, SEABAUGH A, JENA D

Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

HWANG WS, TAHY K, NYAKITI LO, WHEELER VD, MYERSWARD RL, EDDY CR, GASKILL DK, XING HL, SEABAUGH A, JENA D

Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates

APL MATERIALS

HWANG WS, ZHAO P, TAHY K, NYAKITI LO, WHEELER VD, MYERSWARD RL, EDDY CR, GASKILL DK, ROBINSON JA, HAENSCH W, XING H, SEABAUGH A, JENA D