国家/地区 Usa（8）
关键词 GRAPHENE（2） STM（2）
出版物 APPLIED PHYSICS LET.（4）
出版时间 2014（3） 2015（2）
机构 UNIV WISCONS.（8）
作者 RAJPUT S（8）

Transport and photoconduction characteristics of metal-graphene-4H-SiC(0001) heterojunction devices

APPLIED PHYSICS LETTERS

HOSSEINI T, TOMER D, RAJPUT S, LI L, KOUKLIN N

Intrinsic inhomogeneity in barrier height at monolayer graphene/SiC Schottky junction

APPLIED PHYSICS LETTERS

TOMER D, RAJPUT S, HUDY LJ, LI CH, LI L

Direct experimental evidence for the reversal of carrier type upon hydrogen intercalation in epitaxial graphene/SiC(0001)

APPLIED PHYSICS LETTERS

RAJPUT S, LI YY, LI L

Spatial fluctuations in barrier height at the graphene-silicon carbide Schottky junction

NATURE COMMUNICATIONS

RAJPUT S, CHEN MX, LIU Y, LI YY, WEINERT M, LI L

Spatial inhomogeneity in Schottky barrier height at graphene/MoS2 Schottky junctions

JOURNAL OF PHYSICS DAPPLIED PHYSICS

TOMER D, RAJPUT S, LI L

Indirect Interlayer Bonding in Graphene-Topological Insulator van der Waals Heterostructure: Giant Spin-Orbit Splitting of the Graphene Dirac States

ACS NANO

RAJPUT S, LI YY, WEINERT M, LI L

Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

NANOTECHNOLOGY

TOMER D, RAJPUT S, HUDY LJ, LI CH, LI L

Carrier transport in reverse-biased graphene/semiconductor Schottky junctions

APPLIED PHYSICS LETTERS

TOMER D, RAJPUT S, HUDY LJ, LI CH, LI L