国家/地区 Usa（5）
关键词
出版物 APPLIED PHYSICS LET.（3）
出版时间
机构 UNIV CALIF R.（4）
作者 SHUR M（5）

Graphene thickness-graded transistors with reduced electronic noise

APPLIED PHYSICS LETTERS

LIU GX, RUMYANTSEV S, SHUR M, BALANDIN AA

Low-Frequency Current Fluctuations in "Graphene-like" Exfoliated Thin-Films of Bismuth Selenide Topological Insulators

ACS NANO

HOSSAIN MZ, RUMYANTSEV SL, SHAHIL KMF, TEWELDEBRHAN D, SHUR M, BALANDIN AA

Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms

JOURNAL OF PHYSICSCONDENSED MATTER

RUMYANTSEV S, LIU G, STILLMAN W, SHUR M, BALANDIN AA

Low-frequency electronic noise in the double-gate single-layer graphene transistors

APPLIED PHYSICS LETTERS

LIU G, STILLMAN W, RUMYANTSEV S, SHAO Q, SHUR M, BALANDIN AA

Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors

APPLIED PHYSICS LETTERS

STOLYAROV MA, LIU GX, RUMYANTSEV SL, SHUR M, BALANDIN AA