国家/地区 Usa（8）
关键词 GRAPHENE（2）
出版物 IEEE TRANSACTIONS O.（2）
出版时间 2009（2）
机构 UNIV NOTRE D.（4） UNIV FLORIDA（3）
作者 ZHAO P（8）

Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors

NPJ 2D MATERIALS APPLICATIONS

HWANG WS, ZHAO P, KIM SG, YAN R, KLIMECK G, SEABAUGH A, FULLERTONSHIREY SK, XING HG, JENA D

Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

HWANG WS, TAHY K, ZHAO P, NYAKITI LO, WHEELER VD, MYERSWARD RL, EDDY CR, GASKILL DK, XING H, SEABAUGH A, JENA D

SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor

IEEE TRANSACTIONS ON ELECTRON DEVICES

ZHAO P, FEENSTRA RM, GU G, JENA D

Influence of Metal-Graphene Contact on the Operation and Scalability of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

ZHAO P, ZHANG Q, JENA D, KOSWATTA SO

Modeling edge effects in graphene nanoribbon field-effect transistors with real and mode space methods

JOURNAL OF APPLIED PHYSICS

ZHAO P, GUO J

Computational Study of Tunneling Transistor Based on Graphene Nanoribbon

NANO LETTERS

ZHAO P, CHAUHAN J, GUO J

Computational Model of Edge Effects in Graphene Nanoribbon Transistors

NANO RESEARCH

ZHAO P, CHOUDHURY M, MOHANRAM K, GUO J

Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates

APL MATERIALS

HWANG WS, ZHAO P, TAHY K, NYAKITI LO, WHEELER VD, MYERSWARD RL, EDDY CR, GASKILL DK, ROBINSON JA, HAENSCH W, XING H, SEABAUGH A, JENA D