国家/地区 Usa（8）
关键词 HEXAGONAL BORON NITRIDE（8）
出版物 ACS NANO（3） NANO LETTERS（2）
出版时间 2012（2） 2015（2）
机构 COLUMBIA UNI.（4） UNIV TEXAS A.（3）
作者 TANIGUCHI T（8）

Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride

ACS APPLIED MATERIALS INTERFACES

CHOI D, POUDEL N, PARK S, AKINWANDE D, CRONIN SB, WATANABE K, TANIGUCHI T, YAO Z, SHI L

Physical Adsorption and Charge Transfer of Molecular Br-2 on Graphene

ACS NANO

CHEN ZY, DARANCET P, WANG L, CROWTHER AC, GAO YD, DEAN CR, TANIGUCHI T, WATANABE K, HONE J, MARIANETTI CA, BRUS LE

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

ACS NANO

LEE GH, YU YJ, CUI X, PETRONE N, LEE CH, CHOI MS, LEE DY, LEE C, YOO WJ, WATANABE K, TANIGUCHI T, NUCKOLLS C, KIM P, HONE J

Negligible Environmental Sensitivity of Graphene in a Hexagonal Boron Nitride/Graphene/h-BN Sandwich Structure

ACS NANO

WANG L, CHEN ZY, DEAN CR, TANIGUCHI T, WATANABE K, BRUS LE, HONE J

Graphene based heterostructures

SOLID STATE COMMUNICATIONS

DEAN C, YOUNG AF, WANG L, MERIC I, LEE GH, WATANABE K, TANIGUCHI T, SHEPARD K, KIM P, HONE J

Signatures of Phonon and Defect-Assisted Tunneling in Planar Metal-Hexagonal Boron Nitride-Graphene Junctions

NANO LETTERS

CHANDNI U, WATANABE K, TANIGUCHI T, EISENSTEIN JP

Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET

IEEE ELECTRON DEVICE LETTERS

KANG S, FALLAHAZAD B, LEE K, MOVVA H, KIM K, CORBET CM, TANIGUCHI T, WATANABE K, COLOMBO L, REGISTER LF, TUTUC E, BANERJEE SK

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

NANO LETTERS

FALLAHAZAD B, LEE K, KANG S, XUE JM, LARENTIS S, CORBET C, KIM K, MOVVA HCP, TANIGUCHI T, WATANABE K, REGISTER LF, BANERJEE SK, TUTUC E