国家/地区 Usa（2）
关键词 HEXAGONAL BORON NITRIDE HBN（2）
出版物
出版时间 2013（2）
机构
作者

Graphene Field-Effect Transistors Based on Boron-Nitride Dielectrics

PROCEEDINGS OF THE IEEE

MERIC I, DEAN CR, PETRONE N, WANG L, HONE J, KIM P, SHEPARD KL

High-Performance Current Saturating Graphene Field-Effect Transistor With Hexagonal Boron Nitride Dielectric on Flexible Polymeric Substrates

IEEE ELECTRON DEVICE LETTERS

LEE J, HA TJ, PARRISH KN, CHOWDHURY SF, TAO L, DODABALAPUR A, AKINWANDE D