国家/地区 Usa（5）
关键词 SILICON COMPOUND（5）
出版物 PHYSICAL REVIEW B（2）
出版时间 2009（5）
机构 UNIV ARIZONA（2）
作者 BAO W（2） DESHPANDE A（2） LAU CN（2） LEROY BJ（2）

Mapping the Dirac point in gated bilayer graphene

APPLIED PHYSICS LETTERS

DESHPANDE A, BAO W, ZHAO Z, LAU CN, LEROY BJ

Three-fold diffraction symmetry in epitaxial graphene and the SiC substrate

PHYSICAL REVIEW B

SIEGEL DA, ZHOU SY, EL GABALY F, SCHMID AK, MCCARTY KF, LANZARA A

Tunneling spectroscopy of graphene and related reconstructions on SiC(0001)

JOURNAL OF VACUUM SCIENCE TECHNOLOGY A

NIE S, FEENSTRA RM

Theory and measurements of room temperature transport in graphene using SiO2 backgate and electrochemical gate

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B

SHISHIR RS, CHEN F, XIA J, TAO NJ, FERRY DK

Spatially resolved spectroscopy of monolayer graphene on SiO2

PHYSICAL REVIEW B

DESHPANDE A, BAO W, MIAO F, LAU CN, LEROY BJ