国家/地区 Usa（12）
关键词 GRAPHENE（3）
出版物 PHYSICAL REVIEW B（3） ACS NANO（2） APPLIED PHYSICS LET.（2）
JOURNAL OF PHYSICSC.（2） PHYSICAL REVIEW LET.（2）
出版时间 2010（12）
机构 PENN STATE UNIV（12）
作者 ZHU J（5） ZOU K（5） EKLUND PC（3） SNYDER D（3）
WENG XJ（3） CAVALERO R（2） CRESPI VH（2） FANTON M（2）
GUPTA AK（2） HONG X（2） HUGHES Z（2） LABELLA M（2）
ROBINSON JA（2） TRUMBULL K（2）

Nondispersive Raman D band activated by well-ordered interlayer interactions in rotationally stacked bilayer graphene

PHYSICAL REVIEW B

GUPTA AK, TANG YJ, CRESPI VH, EKLUND PC

Structure of few-layer epitaxial graphene on 6H-SiC(0001) at atomic resolution

APPLIED PHYSICS LETTERS

WENG XJ, ROBINSON JA, TRUMBULL K, CAVALERO R, FANTON MA, SNYDER D

Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering

PHYSICAL REVIEW LETTERS

ZOU K, HONG X, KEEFER D, ZHU J

Curvature-induced D-band Raman scattering in folded graphene

JOURNAL OF PHYSICSCONDENSED MATTER

GUPTA AK, NISOLI C, LAMMERT PE, CRESPI VH, EKLUND PC

Intrinsic doping and gate hysteresis in graphene field effect devices fabricated on SiO2 substrates

JOURNAL OF PHYSICSCONDENSED MATTER

JOSHI P, ROMERO HE, NEAL AT, TOUTAM VK, TADIGADAPA SA

Transport in gapped bilayer graphene: The role of potential fluctuations

PHYSICAL REVIEW B

ZOU K, ZHU J

Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O-3

APPLIED PHYSICS LETTERS

HONG X, HOFFMAN J, POSADAS A, ZOU K, AHN CH, ZHU J

Nanoscale fracture in graphene

CHEMICAL PHYSICS LETTERS

TERDALKAR SS, HUANG S, YUAN HY, RENCIS JJ, ZHU T, ZHANG SL

Mechanism for Current Saturation and Energy Dissipation in Graphene Transistors

PHYSICAL REVIEW LETTERS

DASILVA AM, ZOU K, JAIN JK, ZHU J

Reversible fluorination of graphene: Evidence of a two-dimensional wide bandgap semiconductor

PHYSICAL REVIEW B

CHENG SH, ZOU K, OKINO F, GUTIERREZ HR, GUPTA A, SHEN N, EKLUND PC, SOFO JO, ZHU J