国家/地区 Usa（3）
关键词
出版物 APPLIED PHYSICS LET.（2）
出版时间 2014（3）
机构 UNIV TEXAS A.（3）
作者 CHOWDHURY SF（3）

Toward 300 mm Wafer-Scalable High-Performance Polycrystalline Chemical Vapor Deposited Graphene Transistors

ACS NANO

RAHIMI S, TAO L, CHOWDHURY SF, PARK S, JOUVRAY A, BUTTRESS S, RUPESINGHE N, TEO K, AKINWANDE D

Improvement of graphene field-effect transistors by hexamethyldisilazane surface treatment

APPLIED PHYSICS LETTERS

CHOWDHURY SF, SONDE S, RAHIMI S, TAO L, BANERJEE S, AKINWANDE D

Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications

APPLIED PHYSICS LETTERS

RAMON ME, MOVVA HCP, CHOWDHURY SF, PARRISH KN, RAI A, MAGNUSON CW, RUOFF RS, AKINWANDE D, BANERJEE SK