国家/地区 Usa（10）
关键词 GRAPHENE（6） ACCESS RESISTANCE（2） GRAPHENE FET GFET（2）
GRAPHENE PLASMONIC（2）
出版物
出版时间 2016（4） 2013（2） 2017（2）
机构 FLORIDA INT UNIV（10）
作者 PALA N（10）

Field controlled RF Graphene FETs with improved high frequency performance

SOLIDSTATE ELECTRONICS

ALAMIN C, KARABIYIK M, VABBINA PK, SINHA R, PALA N

Improving High-Frequency Characteristics of Graphene FETs by Field-Controlling Electrodes

IEEE ELECTRON DEVICE LETTERS

ALAMIN C, VABBINA PK, KARABIYIK M, SINHA R, PALA N, CHOI W

Graphene-Based Periodic Gate Field Effect Transistor Structures for Terahertz Applications

NANOSCIENCE NANOTECHNOLOGY LETTERS

KARABIYIK M, ALAMIN C, PALA N

Hybridized plasmons in graphene nanorings for extreme nonlinear optics

OPTICAL MATERIALS

GERISLIOGLU B, AHMADIVAND A, PALA N

Graphene Optical Switch Based on Charge Transfer Plasmons

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

AHMADIVAND A, GERISLIOGLU B, PALA N

Tunable THz wave absorption by graphene-assisted plasmonic metasurfaces based on metallic split ring resonators

JOURNAL OF NANOPARTICLE RESEARCH

AHMADIVAND A, SINHA R, KARABIYIK M, VABBINA PK, GERISLIOGLU B, KAYA S, PALA N

Fabrication of Graphene Field-effect Transistor with Field Controlling Electrodes to improve f(T)

MICROELECTRONIC ENGINEERING

ALAMIN C, KARABIYIK M, PALA N

Bandgap engineering of single layer graphene by randomly distributed nanoparticles

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

ALAMIN C, VABBINA PK, KARABIYIK M, SINHA R, WANG CL, PALA N

Graphene FETs with Low-Resistance Hybrid Contacts for Improved High Frequency Performance

NANOMATERIALS

ALAMIN C, KARABIYIK M, VABBINA PK, SINHA R, PALA N

Highly Sensitive Wide Bandwidth Photodetector Based on Internal Photoemission in CVD Grown p-Type MoS2/Graphene Schottky Junction

ACS APPLIED MATERIALS INTERFACES

VABBINA P, CHOUDHARY N, CHOWDHURY AA, SINHA R, KARABIYIK M, DAS S, CHOI W, PALA N