国家/地区 Usa（7）
关键词 EPITAXIAL GRAPHENE（3） NANOELECTRONIC（2）
出版物 APPLIED PHYSICS LET.（3） NANO LETTERS（2）
出版时间 2014（4） 2013（3）
机构 GEORGIA INST TECHNOL（7）
作者 KUNC J（7）

Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions

NANO LETTERS

KUNC J, HU YK, PALMER J, GUO ZL, HANKINSON J, GAMAL SH, BERGER C, DE HEER WA

Controlled epitaxial graphene growth within removable amorphous carbon corrals

APPLIED PHYSICS LETTERS

PALMER J, KUNC J, HU YK, HANKINSON J, GUO ZL, BERGER C, DE HEER WA

Wafer bonding solution to epitaxial graphene-silicon integration

JOURNAL OF PHYSICS DAPPLIED PHYSICS

DONG R, GUO ZL, PALMER J, HU YK, RUAN M, HANKINSON J, KUNC J, BHATTACHARYA SK, BERGER C, DE HEER WA

Local work function measurements of plasma-fluorinated epitaxial graphene

APPLIED PHYSICS LETTERS

SHERPA SD, KUNC J, HU YK, LEVITIN G, DE HEER WA, BERGER C, HESS DW

A method to extract pure Raman spectrum of epitaxial graphene on SiC

APPLIED PHYSICS LETTERS

KUNC J, HU Y, PALMER J, BERGER C, DE HEER WA

Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors

NANO LETTERS

GUO ZL, DONG R, CHAKRABORTY PS, LOURENCO N, PALMER J, HU YK, RUAN M, HANKINSON J, KUNC J, CRESSLER JD, BERGER C, DE HEER WA

A wide-bandgap metal-semiconductor-metal nanostructure made entirely from graphene

NATURE PHYSICS

HICKS J, TEJEDA A, TALEBIBRAHIMI A, NEVIUS MS, WANG F, SHEPPERD K, PALMER J, BERTRAN F, LE FEVRE P, KUNC J, DE HEER WA, BERGER C, CONRAD EH