国家/地区 Usa（9）
关键词 FLUOROPOLYMER（2） RF ANALOG DEVICE（2）
出版物 ACS APPLIED MATERIA.（2） APPLIED PHYSICS LET.（2） IEEE ELECTRON DEVIC.（2）
出版时间 2013（4）
机构 UNIV TEXAS AUSTIN（9）
作者 DODABALAPUR A（9）

Double-Gate MoS2 Field-Effect Transistor with a Multilayer Graphene Floating Gate: A Versatile Device for Logic, Memory, and Synaptic Applications

ACS APPLIED MATERIALS INTERFACES

RODDER MA, VASISHTA S, DODABALAPUR A

25 GHz Embedded-Gate Graphene Transistors with High-K Dielectrics on Extremely Flexible Plastic Sheets

ACS NANO

LEE J, HA TJ, LI HF, PARRISH KN, HOLT M, DODABALAPUR A, RUOFF RS, AKINWANDE D

The Restorative Effect of Fluoropolymer Coating on Electrical Characteristics of Graphene Field-Effect Transistors

IEEE ELECTRON DEVICE LETTERS

HA TJ, LEE J, AKINWANDE D, DODABALAPUR A

High-Performance Current Saturating Graphene Field-Effect Transistor With Hexagonal Boron Nitride Dielectric on Flexible Polymeric Substrates

IEEE ELECTRON DEVICE LETTERS

LEE J, HA TJ, PARRISH KN, CHOWDHURY SF, TAO L, DODABALAPUR A, AKINWANDE D

Transformation of the Electrical Characteristics of Graphene Field-Effect Transistors with Fluoropolymer

ACS APPLIED MATERIALS INTERFACES

HA TJ, LEE J, CHOWDHURY SF, AKINWANDE D, ROSSKY PJ, DODABALAPUR A

Hybrid graphene/organic semiconductor field-effect transistors

APPLIED PHYSICS LETTERS

HA TJ, AKINWANDE D, DODABALAPUR A

Integration of reduced graphene oxide into organic field-effect transistors as conducting electrodes and as a metal modification layer

APPLIED PHYSICS LETTERS

LEE CG, PARK S, RUOFF RS, DODABALAPUR A

Chemical Understanding of the Mechanisms Involved in Mitigation of Charged Impurity Effects by Polar Molecules on Graphene

JOURNAL OF PHYSICAL CHEMISTRY C

WORLEY BC, HAWS RT, ROSSKY PJ, DODABALAPUR A

Dramatic vapor-phase modulation of the characteristics of graphene field-effect transistors

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

WORLEY BC, KIM S, PARK S, ROSSKY PJ, AKINWANDE D, DODABALAPUR A