国家/地区 Usa（5）
关键词
出版物 APPLIED PHYSICS LET.（3）
出版时间 2014（2） 2015（2）
机构 UNIV WISCONSIN（5）
作者 TOMER D（5）

Transport and photoconduction characteristics of metal-graphene-4H-SiC(0001) heterojunction devices

APPLIED PHYSICS LETTERS

HOSSEINI T, TOMER D, RAJPUT S, LI L, KOUKLIN N

Intrinsic inhomogeneity in barrier height at monolayer graphene/SiC Schottky junction

APPLIED PHYSICS LETTERS

TOMER D, RAJPUT S, HUDY LJ, LI CH, LI L

Spatial inhomogeneity in Schottky barrier height at graphene/MoS2 Schottky junctions

JOURNAL OF PHYSICS DAPPLIED PHYSICS

TOMER D, RAJPUT S, LI L

Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

NANOTECHNOLOGY

TOMER D, RAJPUT S, HUDY LJ, LI CH, LI L

Carrier transport in reverse-biased graphene/semiconductor Schottky junctions

APPLIED PHYSICS LETTERS

TOMER D, RAJPUT S, HUDY LJ, LI CH, LI L