国家/地区 Usa（5）
关键词 GRAPHENE（5）
出版物 APPLIED PHYSICS LETTERS（5）
出版时间 2010（3）
机构 UNIV TEXAS A.（3） UNIV TEXAS D.（2）
作者 COLOMBO L（5）

Scaling of Al2O3 dielectric for graphene field-effect transistors

APPLIED PHYSICS LETTERS

FALLAHAZAD B, LEE K, LIAN G, KIM S, CORBET CM, FERRER DA, COLOMBO L, TUTUC E

Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric

APPLIED PHYSICS LETTERS

FALLAHAZAD B, KIM S, COLOMBO L, TUTUC E

Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices

APPLIED PHYSICS LETTERS

LEE B, MORDI G, KIM MJ, CHABAL YJ, VOGEL EM, WALLACE RM, CHO KJ, COLOMBO L, KIM J

Contact resistance in few and multilayer graphene devices

APPLIED PHYSICS LETTERS

VENUGOPAL A, COLOMBO L, VOGEL EM

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

APPLIED PHYSICS LETTERS

KIM S, NAH J, JO I, SHAHRJERDI D, COLOMBO L, YAO Z, TUTUC E, BANERJEE SK