国家/地区 Usa（5）
关键词
出版物 APPLIED PHYSICS LETTERS（5）
出版时间 2013（2） 2015（2）
机构 RENSSELAER P.（3） UNIV CALIF R.（2）
作者 RUMYANTSEV SL（5）

Plasmonic and bolometric terahertz detection by graphene field-effect transistor

APPLIED PHYSICS LETTERS

MURAVIEV AV, RUMYANTSEV SL, LIU G, BALANDIN AA, KNAP W, SHUR MS

The effect of a transverse magnetic field on 1/f noise in graphene

APPLIED PHYSICS LETTERS

RUMYANTSEV SL, COQUILLAT D, RIBEIRO R, GOIRAN M, KNAP W, SHUR MS, BALANDIN AA, LEVINSHTEIN ME

Observation of the memory steps in graphene at elevated temperatures

APPLIED PHYSICS LETTERS

RUMYANTSEV SL, LIU GX, SHUR MS, BALANDIN AA

Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors

APPLIED PHYSICS LETTERS

STOLYAROV MA, LIU GX, RUMYANTSEV SL, SHUR M, BALANDIN AA

Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices

APPLIED PHYSICS LETTERS

SAMNAKAY R, JIANG C, RUMYANTSEV SL, SHUR MS, BALANDIN AA