国家/地区 Usa（6）
关键词
出版物 APPLIED PHYSICS LETTERS（6）
出版时间 2013（4）
机构 RENSSELAER P.（3） UNIV CALIF R.（3）
作者 SHUR MS（6）

Plasmonic and bolometric terahertz detection by graphene field-effect transistor

APPLIED PHYSICS LETTERS

MURAVIEV AV, RUMYANTSEV SL, LIU G, BALANDIN AA, KNAP W, SHUR MS

The effect of a transverse magnetic field on 1/f noise in graphene

APPLIED PHYSICS LETTERS

RUMYANTSEV SL, COQUILLAT D, RIBEIRO R, GOIRAN M, KNAP W, SHUR MS, BALANDIN AA, LEVINSHTEIN ME

Reduction of 1/f noise in graphene after electron-beam irradiation

APPLIED PHYSICS LETTERS

HOSSAIN MZ, RUMYANTSEV S, SHUR MS, BALANDIN AA

Origin of 1/f noise in graphene multilayers: Surface vs. volume

APPLIED PHYSICS LETTERS

LIU GX, RUMYANTSEV S, SHUR MS, BALANDIN AA

Observation of the memory steps in graphene at elevated temperatures

APPLIED PHYSICS LETTERS

RUMYANTSEV SL, LIU GX, SHUR MS, BALANDIN AA

Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices

APPLIED PHYSICS LETTERS

SAMNAKAY R, JIANG C, RUMYANTSEV SL, SHUR MS, BALANDIN AA