国家/地区 Usa（4）
关键词
出版物 APPLIED PHYSICS LETTERS（4）
出版时间 2014（3）
机构 UNIV WISCONSIN（4）
作者 RAJPUT S（4）

Transport and photoconduction characteristics of metal-graphene-4H-SiC(0001) heterojunction devices

APPLIED PHYSICS LETTERS

HOSSEINI T, TOMER D, RAJPUT S, LI L, KOUKLIN N

Intrinsic inhomogeneity in barrier height at monolayer graphene/SiC Schottky junction

APPLIED PHYSICS LETTERS

TOMER D, RAJPUT S, HUDY LJ, LI CH, LI L

Direct experimental evidence for the reversal of carrier type upon hydrogen intercalation in epitaxial graphene/SiC(0001)

APPLIED PHYSICS LETTERS

RAJPUT S, LI YY, LI L

Carrier transport in reverse-biased graphene/semiconductor Schottky junctions

APPLIED PHYSICS LETTERS

TOMER D, RAJPUT S, HUDY LJ, LI CH, LI L