国家/地区 Usa（6）
关键词 GRAPHENE（4） TOTAL IONIZING DOSE（3）
出版物 IEEE TRANSACTIONS ON NUCLEAR SCIENCE（6）
出版时间 2012（2）
机构 VANDERBILT U.（6）
作者 FLEETWOOD DM（6）

Monte Carlo Simulation of Displacement Damage in Graphene

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

LIAO WJ, ALLES ML, ZHANG EX, FLEETWOOD DM, REED RA, WELLER RA, SCHRIMPF RD

Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

WANG P, PERINI C, O HARA A, TUTTLE BR, ZHANG EX, GONG H, DONG L, LIANG C, JIANG R, LIAO W, FLEETWOOD DM, SCHRIMPF RD, VOGEL EM, PANTELIDES ST

Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ZHANG CX, WANG B, DUAN GX, ZHANG EX, FLEETWOOD DM, ALLES ML, SCHRIMPF RD, ROONEY AP, KHESTANOVA E, AUTON G, GORBACHEV RV, HAIGH SJ, PANTELIDES ST

Surface Reactions and Defect Formation in Irradiated Graphene Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

PUZYREV YS, WANG B, ZHANG EX, ZHANG CX, NEWAZ AKM, BOLOTIN KI, FLEETWOOD DM, SCHRIMPF RD, PANTELIDES ST

Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ZHANG CX, ZHANG EX, FLEETWOOD DM, ALLES ML, SCHRIMPF RD, SONG EB, KIM SM, GALATSIS K, WANG KLW

Low-Energy X-ray and Ozone-Exposure Induced Defect Formation in Graphene Materials and Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ZHANG EX, NEWAZ AKM, WANG B, BHANDARU S, ZHANG CX, FLEETWOOD DM, BOLOTIN KI, PANTELIDES ST, ALLES ML, SCHRIMPF RD, WEISS SM, REED RA, WELLER RA