国家/地区 Germany（3） Usa（2）
关键词
出版物 PHYSICAL REVIEW LET.（2）
出版时间 2009（6）
机构
作者 SEYLLER T（6）

Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

APPLIED PHYSICS LETTERS

WEINGART S, BOCK C, KUNZE U, SPECK F, SEYLLER T, LEY L

Experimental studies of the electronic structure of graphene

PROGRESS IN SURFACE SCIENCE

BOSTWICK A, MCCHESNEY J, OHTA T, ROTENBERG E, SEYLLER T, HORN K

Quasiparticle Transformation during a Metal-Insulator Transition in Graphene

PHYSICAL REVIEW LETTERS

BOSTWICK A, MCCHESNEY JL, EMTSEV KV, SEYLLER T, HORN K, KEVAN SD, ROTENBERG E

Raman Topography and Strain Uniformity of Large-Area Epitaxial Graphene

NANO LETTERS

ROBINSON JA, PULS CP, STALEY NE, STITT JP, FANTON MA, EMTSEV KV, SEYLLER T, LIU Y

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

NATURE MATERIALS

EMTSEV KV, BOSTWICK A, HORN K, JOBST J, KELLOGG GL, LEY L, MCCHESNEY JL, OHTA T, RESHANOV SA, ROHRL J, ROTENBERG E, SCHMID AK, WALDMANN D, WEBER HB, SEYLLER T

Friction and Dissipation in Epitaxial Graphene Films

PHYSICAL REVIEW LETTERS

FILLETER T, MCCHESNEY JL, BOSTWICK A, ROTENBERG E, EMTSEV KV, SEYLLER T, HORN K, BENNEWITZ R