国家/地区 Korea（2）
关键词 WIDE BAND GAP SEMICONDUCTOR（6）
出版物 PHYSICAL REVIEW B（2）
出版时间 2009（6）
机构
作者

Atomic and electronic structure of monolayer graphene on 6H-SiC(0001)(3x3): A scanning tunneling microscopy study

PHYSICAL REVIEW B

HIEBEL F, MALLET P, MAGAUD L, VEUILLEN JY

Vertically aligned ZnO nanostructures grown on graphene layers

APPLIED PHYSICS LETTERS

KIM YJ, LEE JH, YI GC

Stacking domains of epitaxial few-layer graphene on SiC(0001)

PHYSICAL REVIEW B

HIBINO H, MIZUNO S, KAGESHIMA H, NAGASE M, YAMAGUCHI H

Tunneling spectroscopy of graphene and related reconstructions on SiC(0001)

JOURNAL OF VACUUM SCIENCE TECHNOLOGY A

NIE S, FEENSTRA RM

Transmission electron microscopy and scanning tunneling microscopy investigations of graphene on 4H-SiC(0001)

JOURNAL OF APPLIED PHYSICS

BORYSIUK J, BOZEK R, STRUPINSKI W, WYSMOLEK A, GRODECKI K, STEPNIEWSKI R, BARANOWSKI JM

Thermal Modeling of Graphene Layer on the Peak Channel Temperature of AlGaN/GaN High Electron Mobility Transistors

ELECTROCHEMICAL SOLID STATE LETTERS

KO G, KIM J