国家/地区 Germany（3）
关键词
出版物
出版时间 2009（3）
机构 MAX PLANCK INST FESTKORPERFORSCH（3）
作者 RIEDL C（3）

Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation

PHYSICAL REVIEW LETTERS

RIEDL C, COLETTI C, IWASAKI T, ZAKHAROV AA, STARKE U

Low temperature growth of epitaxial graphene on SiC induced by carbon evaporation

APPLIED PHYSICS LETTERS

ALTEMIMY A, RIEDL C, STARKE U

Epitaxial graphene on SiC(0001) and SiC(000(1)over-bar): from surface reconstructions to carbon electronics

JOURNAL OF PHYSICSCONDENSED MATTER

STARKE U, RIEDL C