国家/地区 Usa（12）
关键词 GRAPHENE（4） ENERGY GAP（2）
出版物 PHYSICAL REVIEW B（5） APPLIED PHYSICS LET.（3） NANO LETTERS（2）
出版时间 2009（12）
机构 PURDUE UNIV（12）
作者 APPENZELLER .（3） BOLEN ML（3） CAPANO MA（3） LOW T（3）
BIEDERMANN L.（2） DATTA S（2）

Ballistic-Ohmic quantum Hall plateau transition in a graphene p-n junction

PHYSICAL REVIEW B

LOW T

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

APPLIED PHYSICS LETTERS

SHEN T, GU JJ, XU M, WU YQ, BOLEN ML, CAPANO MA, ENGEL LW, YE PD

Electronic transport properties of a tilted graphene p-n junction

PHYSICAL REVIEW B

LOW T, APPENZELLER J

Graphene formation mechanisms on 4H-SiC(0001)

PHYSICAL REVIEW B

BOLEN ML, HARRISON SE, BIEDERMANN LB, CAPANO MA

Optical contrast and clarity of graphene on an arbitrary substrate

APPLIED PHYSICS LETTERS

WANG XF, ZHAO M, NOLTE DD

Screening and Interlayer Coupling in Multilayer Graphene Field-Effect Transistors

NANO LETTERS

SUI Y, APPENZELLER J

Thermal Conductivity and Thermal Rectification in Graphene Nanoribbons: A Molecular Dynamics Study

NANO LETTERS

HU JN, RUAN XL, CHEN YP

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

APPLIED PHYSICS LETTERS

LUISIER M, KLIMECK G

Conductance Asymmetry of Graphene p-n Junction

IEEE TRANSACTIONS ON ELECTRON DEVICES

LOW T, HONG S, APPENZELLER J, DATTA S, LUNDSTROM MS

Localization and the Kosterlitz-Thouless Transition in Disordered Graphene

PHYSICAL REVIEW LETTERS

ZHANG YY, HU JP, BERNEVIG BA, WANG XR, XIE XC, LIU WM