国家/地区 Usa（5）
关键词
出版物 NEW JOURNAL OF PHYS.（2）
出版时间 2010（5）
机构 SANDIA NATL .（3）
作者 OHTA T（5）

Observation of the integer quantum Hall effect in high quality, uniform wafer-scale epitaxial graphene films

APPLIED PHYSICS LETTERS

PAN W, HOWELL SW, ROSS AJ, OHTA T, FRIEDMANN TA

Electrostatic transfer of patterned epitaxial graphene from SiC(000(1)over-bar) to glass

NEW JOURNAL OF PHYSICS

BIEDERMANN LB, BEECHEM TE, ROSS AJ, OHTA T, HOWELL SW

The interaction of quasi-particles in graphene with chemical dopants

NEW JOURNAL OF PHYSICS

BOSTWICK A, OHTA T, MCCHESNEY JL, EMTSEV KV, SPECK F, SEYLLER T, HORN K, KEVAN SD, ROTENBERG E

Extended van Hove Singularity and Superconducting Instability in Doped Graphene

PHYSICAL REVIEW LETTERS

MCCHESNEY JL, BOSTWICK A, OHTA T, SEYLLER T, HORN K, GONZALEZ J, ROTENBERG E

Role of carbon surface diffusion on the growth of epitaxial graphene on

PHYSICAL REVIEW B

OHTA T, BARTELT NC, NIE S, THURMER K, KELLOGG GL