国家/地区 China（3）
关键词 FIELD EFFECT TRANSISTOR（3）
出版物 APPLIED PHYSICS LET.（2）
出版时间 2010（3）
机构
作者

Controllable N-Doping of Graphene

NANO LETTERS

GUO BD, LIU QA, CHEN ED, ZHU HW, FANG LA, GONG JR

Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors

APPLIED PHYSICS LETTERS

KANG JH, HE Y, ZHANG JY, YU XX, GUAN XM, YU ZP

A high-performance top-gate graphene field-effect transistor based frequency doubler

APPLIED PHYSICS LETTERS

WANG ZX, ZHANG ZY, XU HL, DING L, WANG S, PENG LM