国家/地区 Usa（7）
关键词 NANOELECTRONIC（7）
出版物 NANO LETTERS（3）
出版时间 2010（7）
机构 UNIV CALIF B.（3） UNIV CALIF L.（2）
作者 BAI JW（2） BOKOR J（2） DUAN XF（2） HUANG Y（2）
ISMACH A（2） LIAO L（2） LIN YC（2）

Graphene for CMOS and Beyond CMOS Applications

PROCEEDINGS OF THE IEEE

BANERJEE SK, REGISTER LF, TUTUC E, BASU D, KIM S, REDDY D, MACDONALD AH

Performance Characteristics of Scaled Bilayer Graphene Pseudospin Devices

IEEE TRANSACTIONS ON ELECTRON DEVICES

GILBERT MJ

Formation of Bandgap and Subbands in Graphene Nanomeshes with Sub-10 nm Ribbon Width Fabricated via Nanoimprint Lithography

NANO LETTERS

LIANG XG, JUNG YS, WU SW, ISMACH A, OLYNICK DL, CABRINI S, BOKOR J

Direct Chemical Vapor Deposition of Graphene on Dielectric Surfaces

NANO LETTERS

ISMACH A, DRUZGALSKI C, PENWELL S, SCHWARTZBERG A, ZHENG M, JAVEY A, BOKOR J, ZHANG YG

Top-Gated Graphene Nanoribbon Transistors with Ultrathin High-k Dielectrics

NANO LETTERS

LIAO L, BAI JW, CHENG R, LIN YC, JIANG S, HUANG Y, DUAN XF

High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

LIAO L, BAI JW, QU YQ, LIN YC, LI YJ, HUANG Y, DUAN XF

Inverse temperature dependence of subthreshold slope in graphene nanoribbon tunneling transistors

APPLIED PHYSICS LETTERS

YOON Y, SALAHUDDIN S