国家/地区 Usa(71) China(28) Singapore(17) Korea(11)
Germany(7) England(6) France(6) Japan(6)
Italy(5) Brazil(4) India(4) Taiwan(4)
Australia(3) Belgium(3) Turkey(3) Ukraine(3)
Canada(2) Netherlands(2) Romania(2) Switzerland(2)
关键词 GRAPHENE(96) NANOSTRUCTURED MATE.(22) FIELD EFFECT TRANSI.(15)
ELEMENTAL SEMICONDU.(13) SILICON COMPOUND(12) RAMAN SPECTRA(10)
DENSITY FUNCTIONAL .(9) SILICON(9) AB INITIO CALCULATI.(8)
EPITAXIAL LAYER(8) SCANNING TUNNELLING.(8) ELECTRONIC STRUCTUR.(7)
MONOLAYER(7) DOPING(6) ELECTRICAL CONDUCTI.(6)
出版物 APPLIED PHYSICS LETTERS(194)
出版时间 2010(194)
机构 CHINESE ACAD.(10) NATL UNIV SI.(10) NANYANG TECH.(6) PURDUE UNIV(6)
N CAROLINA S.(5) UNIV CALIF B.(5) UNIV CALIF L.(5) PEKING UNIV(4)
CNRS(3) COLUMBIA UNI.(3) UNIV FLORIDA(3) UNIV MANCHES.(3)
BILKENT UNIV(2) GEORGIA INST.(2) HUNAN UNIV(2) IBM CORP(2)
INDIAN INST .(2) KOREA ADV IN.(2) MIT(2) NAS UKRAINE(2)
作者 ZHANG C(6) CHEN YP(5) SHEN ZX(5) YU T(5)
JAUREGUI LA(4) KIM KW(4) PEETERS FM(4) COLOMBO L(3)
DEDKOV YS(3) EDDY CR(3) FENG YP(3) FONIN M(3)
GASKILL DK(3) GUO J(3) JALILIAN R(3) KIM JH(3)
LEE JH(3) LIN YM(3) LOH KP(3) LU Y(3)

APPLIED PHYSICS LETTERS

OUYANG YJ, GUO J

APPLIED PHYSICS LETTERS

SHIN YJ, KWON JH, KALON G, LAM KT, BHATIA CS, LIANG G, YANG H

APPLIED PHYSICS LETTERS

WANG LJ, CAO G, TU T, LI HO, ZHOU C, HAO XJ, SU Z, GUO GC, JIANG HW, GUO GP

APPLIED PHYSICS LETTERS

NELSON FJ, KAMINENI VK, ZHANG T, COMFORT ES, LEE JU, DIEBOLD AC

APPLIED PHYSICS LETTERS

PAN W, HOWELL SW, ROSS AJ, OHTA T, FRIEDMANN TA

APPLIED PHYSICS LETTERS

ROUXINOL FP, GELAMO RV, AMICI RG, VAZ AR, MOSHKALEV SA

APPLIED PHYSICS LETTERS

SHIN YJ, KALON G, SON J, KWON JH, NIU J, BHATIA CS, LIANG GC, YANG H