国家/地区 China（6）
关键词 DOPING（6）
出版物
出版时间 2011（6）
机构
作者

Electronic structure tuning and band gap opening of graphene by hole/electron codoping

PHYSICS LETTERS A

DENG XH, WU YQ, DAI JY, KANG DD, ZHANG DY

First-principles studies on doped graphene as anode materials in lithium-ion batteries

THEORETICAL CHEMISTRY ACCOUNTS

WU DH, LI YF, ZHOU Z

Monolayer graphene film/silicon nanowire array Schottky junction solar cells

APPLIED PHYSICS LETTERS

XIE C, LV P, NIE BA, JIE JS, ZHANG XW, WANG Z, JIANG P, HU ZZ, LUO LB, ZHU ZF, WANG L, WU CY

Physical Insight Into Substitutional N-Doped Graphene Nanoribbons With Armchair Edges

IEEE TRANSACTIONS ON NANOTECHNOLOGY

YU SS, ZHENG WT, JIANG Q

Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study

CHINESE PHYSICS B

DAI XQ, TANG YN, DAI YW, LI YH, ZHAO JH, ZHAO B, YANG ZX

Control of Carrier Type and Density in Exfoliated Graphene by Interface Engineering

ACS NANO

WANG R, WANG SN, ZHANG DD, LI ZJ, FANG Y, QIU XH