国家/地区 China（5）
关键词 GRAPHENE（2） SI SUBSTRATE（2） SYNCHROTRON RADIATI.（2）
出版物
出版时间 2011（5）
机构 UNIV SCI TECHNOL CHINA（5）
作者 KANG CY（5）

Direct Graphene Growth by Depositing Carbon Atoms on Si Substrate Covered by SiC Buffer Layers

ACTA PHYSICOCHIMICA SINICA

TANG J, KANG CY, LI LM, XU PS

Growth of Few-Layer Graphene on Sapphire Substrates by Directly Depositing Carbon Atoms

CHINESE PHYSICS LETTERS

KANG CY, TANG J, LIU ZL, LI LM, YAN WS, WEI SQ, XU PS

Graphene films grown on Si substrate via direct deposition of solid-state carbon atoms

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

TANG J, KANG CY, LI LM, YAN WS, WEI SQ, XU PS

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

JOURNAL OF INORGANIC MATERIALS

LI LM, TANG J, KANG CY, PAN GQ, YAN WS, WEI SQ, XU PS

Preparation of graphene on different-polarity 6H-SiC substrates and the study of their electronic structures

ACTA PHYSICA SINICA

KANG CY, TANG J, LI LM, PAN HB, YAN WS, XU PS, WEI SQ, CHEN XF, XU XG