国家/地区 Usa（4）
关键词
出版物 PHYSICAL REVIEW B（3）
出版时间 2011（4）
机构 NATL RENEWAB.（4）
作者 HUANG B（4）

Theoretical study of corundum as an ideal gate dielectric material for graphene transistors

PHYSICAL REVIEW B

HUANG B, XU Q, WEI SH

Strain control of magnetism in graphene decorated by transition-metal atoms

PHYSICAL REVIEW B

HUANG B, YU JJ, WEI SH

Controlling doping in graphene through a SiC substrate: A first-principles study

PHYSICAL REVIEW B

HUANG B, XIANG HJ, WEI SH

Electronic properties of boron and nitrogen doped graphene nanoribbons and its application for graphene electronics

PHYSICS LETTERS A

HUANG B