国家/地区 Germany（2）
关键词
出版物 APPLIED PHYSICS LETTERS（3）
出版时间 2011（3）
机构
作者 SEYLLER T（3）

The quasi-free-standing nature of graphene on H-saturated SiC(0001)

APPLIED PHYSICS LETTERS

SPECK F, JOBST J, FROMM F, OSTLER M, WALDMANN D, HUNDHAUSEN M, WEBER HB, SEYLLER T

High-transconductance graphene solution-gated field effect transistors

APPLIED PHYSICS LETTERS

HESS LH, HAUF MV, SEIFERT M, SPECK F, SEYLLER T, STUTZMANN M, SHARP ID, GARRIDO JA

Highly p-doped epitaxial graphene obtained by fluorine intercalation

APPLIED PHYSICS LETTERS

WALTER AL, JEON KJ, BOSTWICK A, SPECK F, OSTLER M, SEYLLER T, MORESCHINI L, KIM YS, CHANG YJ, HORN K, ROTENBERG E