国家/地区 Korea（4）
关键词
出版物 APPLIED PHYSICS LETTERS（4）
出版时间 2011（4）
机构 KOREA ADV IN.（2）
作者 SEO S（4）

Probing nanoscale conductance of monolayer graphene under pressure

APPLIED PHYSICS LETTERS

KWON S, CHOI S, CHUNG HJ, YANG H, SEO S, JHI SH, PARK JY

Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition

APPLIED PHYSICS LETTERS

LEE JK, CHUNG HJ, HEO J, SEO S, CHO IH, KWON HI, LEE JH

Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

APPLIED PHYSICS LETTERS

LEE YG, KANG CG, JUNG UJ, KIM JJ, HWANG HJ, CHUNG HJ, SEO S, CHOI R, LEE BH

Highly air-stable electrical performance of graphene field effect transistors by interface engineering with amorphous fluoropolymer

APPLIED PHYSICS LETTERS

SHIN WC, SEO S, CHO BJ