国家/地区 Usa（4）
关键词
出版物
出版时间 2012（5）
机构 GEORGIA INST.（3）
作者 CONRAD EH（5）

Electronic structure of epitaxial graphene grown on the C-face of SiC and its relation to the structure

NEW JOURNAL OF PHYSICS

TEJEDA A, TALEBIBRAHIMI A, DE HEER W, BERGER C, CONRAD EH

Graphene investigated by synchrotron radiation

MRS BULLETIN

HICKS J, CONRAD EH

High Island Densities and Long Range Repulsive Interactions: Fe on Epitaxial Graphene

PHYSICAL REVIEW LETTERS

BINZ SM, HUPALO M, LIU XJ, WANG CZ, LU WC, THIEL PA, HO KM, CONRAD EH, TRINGIDES MC

Silicon intercalation into the graphene-SiC interface

PHYSICAL REVIEW B

WANG F, SHEPPERD K, HICKS J, NEVIUS MS, TINKEY H, TEJEDA A, TALEBIBRAHIMI A, BERTRAN F, LE FEVRE P, TORRANCE DB, FIRST PN, DE HEER WA, ZAKHAROV AA, CONRAD EH

The structure of graphene grown on the SiC (000(1)over-bar) surface

JOURNAL OF PHYSICS DAPPLIED PHYSICS

HICKS J, SHEPPERD K, WANG F, CONRAD EH