国家/地区 Usa（4） Korea（3）
关键词 GRAPHENE（4） NONVOLATILE MEMORY（3） CHARGETRAP MEMORY（2）
CHEMICAL VAPOR DEPO.（2）
出版物 ACS NANO（2）
出版时间 2012（7）
机构 DONGGUK UNIV.（2） MIT（2）
作者 KIM SM（7）

Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices

APPLIED PHYSICS LETTERS

LEE S, SONG EB, KIM SM, LEE Y, SEO DH, SEO S, WANG KL

Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

ZHANG CX, ZHANG EX, FLEETWOOD DM, ALLES ML, SCHRIMPF RD, SONG EB, KIM SM, GALATSIS K, WANG KLW

Pool boiling CHF enhancement by graphene-oxide nanofluid under nuclear coolant chemical environments

NUCLEAR ENGINEERING DESIGN

PARK SD, LEE SW, KANG S, KIM SM, BANG IC

Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices

ACS NANO

KIM KK, HSU A, JIA XT, KIM SM, SHI YM, DRESSELHAUS M, PALACIOS T, KONG J

Transparent and Flexible Graphene Charge-Trap Memory

ACS NANO

KIM SM, SONG EB, LEE S, ZHU JF, SEO DH, MECKLENBURG M, SEO S, WANG KL

Fabrication and electrical characteristics of graphene-based charge-trap memory devices

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

LEE S, KIM SM, SONG EB, WANG KL, SEO DH, SEO S

van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates

NANO LETTERS

SHI YM, ZHOU W, LU AY, FANG WJ, LEE YH, HSU AL, KIM SM, KIM KK, YANG HY, LI LJ, IDROBO JC, KONG J