国家/地区 Usa（7） France（4） Korea（4）
关键词 TRANSISTOR（18）
出版物 ACS NANO（5） SOLIDSTATE ELECTRON.（3） NANO LETTERS（2）
出版时间 2012（18）
机构 UNIV BORDEAU.（2）
作者 HAPPY H（3） FREGONESE S（2） MAJEK C（2） MANEUX C（2）
MENG N（2） RUOFF RS（2） ZIMMER T（2）

Direct Growth of Graphene Nanoribbons for Large-Scale Device Fabrication

NANO LETTERS

MARTINFERNANDEZ I, WANG DB, ZHANG YG

Graphene: An Emerging Electronic Material

ADVANCED MATERIALS

WEISS NO, ZHOU HL, LIAO L, LIU Y, JIANG S, HUANG Y, DUAN XF

Transport Characteristics of Multichannel Transistors Made from Densely Aligned Sub-10 nm Half-Pitch Graphene Nanoribbons

ACS NANO

LIANG XG, WI SJ

Extending ballistic graphene FET lumped element models to diffusive devices

SOLIDSTATE ELECTRONICS

VINCENZI G, DELIGEORGIS G, COCCETTI F, DRAGOMAN M, PIERANTONI L, MENCARELLI D, PLANA R

A Facile Route To Recover Intrinsic Graphene over Large Scale

ACS NANO

SHIN DW, LEE HM, YU SM, LIM KS, JUNG JH, KIM MK, KIM SW, HAN JH, RUOFF RS, YOO JB

Large-area graphene synthesis and its application to interface-engineered field effect transistors

SOLID STATE COMMUNICATIONS

JO SB, PARK J, LEE WH, CHO K, HONG BH

Electrical compact modelling of graphene transistors

SOLIDSTATE ELECTRONICS

FREGONESE S, MENG N, NGUYEN HN, MAJEK C, MANEUX C, HAPPY H, ZIMMER T

Advances in Graphene-Related Technologies: Synthesis, Devices and Outlook

RECENT PATENTS ON NANOTECHNOLOGY

FRAZIER RM, HOUGH WL, CHOPRA N, HATHCOCK KW

Converting Graphene Oxide Monolayers into Boron Carbonitride Nanosheets by Substitutional Doping

SMALL

LIN TW, SU CY, ZHANG XQ, ZHANG WJ, LEE YH, CHU CW, LIN HY, CHANG MT, CHEN FR, LI LJ

Self-Aligned Fabrication of Graphene RF Transistors with T-Shaped Gate

ACS NANO

BADMAEV A, CHE YC, LI Z, WANG C, ZHOU CW