国家/地区 | Germany(3) |
关键词 | |
出版物 | |
出版时间 |
2012(3)![]() |
机构 |
TECH UNIV DARMSTADT(3)![]() |
作者 |
WESSELY PJ(3)![]() |
JOURNAL OF VACUUM SCIENCE TECHNOLOGY B
WESSELY PJ, WESSELY F, BIRINCI E, SCHWALKE U, RIEDINGER B
Silicon-CMOS compatible in-situ CCVD grown graphene transistors with ultra-high on/off-current ratio
PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES
WESSELY PJ, WESSELY F, BIRINCI E, BECKMANN K, RIEDINGER B, SCHWALKE U
ELECTROCHEMICAL SOLID STATE LETTERS
WESSELY PJ, WESSELY F, BIRINCI E, RIEDINGER B, SCHWALKE U