国家/地区 Germany（3）
关键词
出版物 NEW JOURNAL OF PHYSICS（4）
出版时间 2013（4）
机构
作者 SEYLLER T（4）

Structural investigation of nanocrystalline graphene grown on (6 root 3 x 6 root 3)R30 degrees-reconstructed SiC surfaces by molecular beam epitaxy

NEW JOURNAL OF PHYSICS

SCHUMANN T, DUBSLAFF M, OLIVEIRA MH, HANKE M, FROMM F, SEYLLER T, NEMEC L, BLUM V, SCHEFFLER M, LOPES JMJ, RIECHERT H

Looking behind the scenes: Raman spectroscopy of top-gated epitaxial graphene through the substrate

NEW JOURNAL OF PHYSICS

FROMM F, WEHRFRITZ P, HUNDHAUSEN M, SEYLLER T

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

NEW JOURNAL OF PHYSICS

FROMM F, OLIVEIRA MH, MOLINASANCHEZ A, HUNDHAUSEN M, LOPES JMJ, RIECHERT H, WIRTZ L, SEYLLER T

Small scale rotational disorder observed in epitaxial graphene on SiC(0001)

NEW JOURNAL OF PHYSICS

WALTER AL, BOSTWICK A, SPECK F, OSTLER M, KIM KS, CHANG YJ, MORESCHINI L, INNOCENTI D, SEYLLER T, HORN K, ROTENBERG E