国家/地区 Korea（3）
关键词
出版物
出版时间 2014（3）
机构 POHANG UNIV .（2）
作者 PARK HM（3）

Band gap engineering for graphene by using Na+ ions

APPLIED PHYSICS LETTERS

SUNG SJ, LEE PR, KIM JG, RYU MT, PARK HM, CHUNG JW

Enhancement of memory margins for stable organic bistable devices based on graphene-oxide layers due to embedded CuInS2 quantum dots

CARBON

YUN DY, PARK HM, KIM SW, KIM SW, KIM TW

Spin-induced band modifications of graphene through intercalation of magnetic iron atoms

NANOSCALE

SUNG SJ, YANG JW, LEE PR, KIM JG, RYU MT, PARK HM, LEE G, HWANG CC, KIM KS, KIM JS, CHUNG JW