国家/地区 Germany（4）
关键词 SILICON CARBIDE（4）
出版物
出版时间 2014（4）
机构
作者

Subsurface and interface channeling of keV ions in graphene/SiC

NUCLEAR INSTRUMENTS METHODS IN PHYSICS RESEARCH SECTION BBEAM INTERACTIONS WITH MATERIALS ATOMS

ROSANDI Y, URBASSEK HM

Polarization doping of graphene on silicon carbide

2D MATERIALS

MAMMADOV S, RISTEIN J, KOCH RJ, OSTLER M, RAIDEL C, WANKE M, VASILIAUSKAS R, YAKIMOVA R, SEYLLER T

Monolithic circuits with epitaxial graphene/silicon carbide transistors

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

HERTEL S, KRIEGER M, WEBER HB

Electrical gating and rectification in graphene three-terminal junctions

APPLIED SURFACE SCIENCE

HANDEL B, HAHNLEIN B, GOCKERITZ R, SCHWIERZ F, PEZOLDT J