国家/地区 China（6）
关键词
出版物 ACTA PHYSICA SINICA（2）
出版时间 2014（6）
机构 HEBEI SEMICO.（4） CHINESE ACAD.（2）
作者 LIU QB（6）

Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

APPLIED PHYSICS LETTERS

YU C, LIU QB, LI J, LU WL, HE ZZ, CAI SJ, FENG ZH

An ultra clean self-aligned process for high maximum oscillation frequency graphene transistors

CARBON

FENG ZH, YU C, LI J, LIU QB, HE ZZ, SONG XB, WANG JJ, CAI SJ

Radio-Frequency Performance of Epitaxial Graphene Field-Effect Transistors on Sapphire Substrates

CHINESE PHYSICS LETTERS

LIU QB, YU C, LI J, SONG XB, HE ZZ, LU WL, GU GD, WANG YG, FENG ZH

The second-order combination Raman modes of bilayer graphene in the range of 1800-2150 cm(-1)

ACTA PHYSICA SINICA

LI QQ, ZHANG X, WU JB, LU Y, TAN PH, FENG ZH, LI J, WEI C, LIU QB

A novel semiconductor compatible path for nano-graphene synthesis using CBr4 precursor and Ga catalyst

SCIENTIFIC REPORTS

WANG SM, GONG Q, LI YY, CAO CF, ZHOU HF, YAN JY, LIU QB, ZHANG LY, DING GQ, DI ZF, XIE XM

Quasi-equilibrium growth of monolayer epitaxial graphene on SiC (0001)

ACTA PHYSICA SINICA

YU C, LI J, LIU QB, CAI SJ, FENG ZH