国家/地区 Taiwan（5）
关键词
出版物 APPLIED PHYSICS AMA.（2）
出版时间 2015（5）
机构 NATL CHANGHU.（4）
作者 LIN YJ（5）

Correlation between phonon and impurity scatterings, potential fluctuations and leakage conduction of graphene/n-type Si Schottky diodes

SUPERLATTICES MICROSTRUCTURES

LIN YJ

Fabrication and Photovoltaic Properties of Dye-Sensitized Solar Cells Modified by Graphene Oxide and Magnetic Bead

IEEE ELECTRON DEVICE LETTERS

CHOU JC, CHU CM, LIAO YH, HUANG CH, LIN YJ, WU H, NIEN YH

Interface characteristics for graphene contact to n-type and p-type GaN observed by X-ray photoelectron spectroscopy

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

TSAI CL, LIN YJ, LIN JH

Temperature-dependent electrical properties for graphene Schottky contact on n-type Si with and without sulfide treatment

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

LIN YJ, ZENG JJ, CHANG HC

Tuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation

APPLIED PHYSICS AMATERIALS SCIENCE PROCESSING

LIN JH, LIN YJ, CHANG HC