国家/地区 Belgium（3）
关键词
出版物
出版时间 2015（3）
机构 IMEC（2）
作者 HEYNS M（3）

Deducing the apparent flat-band position V-afb and the doping level of large area single layer graphene MOS capacitors

MICROELECTRONIC ENGINEERING

LIN HCD, ASSELBERGHS I, VAIS A, ARUTCHELVAN G, DELABIE A, HEYNS M, MOCUTA A, RADU I, THEAN A

Transition metal contacts to graphene

APPLIED PHYSICS LETTERS

POLITOU M, ASSELBERGHS I, RADU I, CONARD T, RICHARD O, LEE CS, MARTENS K, SAYAN S, HUYGHEBAERT C, TOKEI Z, DE GENDT S, HEYNS M

Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides

NANOSCALE

NOURBAKHSH A, ADELMANN C, SONG Y, LEE CS, ASSELBERGHS I, HUYGHEBAERT C, BRIZZI S, TALLARIDA M, SCHMEISSER D, VAN ELSHOCHT S, HEYNS M, KONG J, PALACIOS T, DE GENDT S