国家/地区 China（4）
关键词
出版物
出版时间 2016（4）
机构
作者 DING SJ（4）

Gaps induced by inversion symmetry breaking and second-generation Dirac cones in graphene/hexagonal boron nitride

NATURE PHYSICS

WANG EY, LU XB, DING SJ, YAO W, YAN MZ, WAN GL, DENG K, WANG SP, CHEN GR, MA LG, JUNG J, FEDOROV AV, ZHANG YB, ZHANG GY, ZHOU SY

Nitrogen-Doped Graphene Quantum Dots Anchored on Thermally Reduced Graphene Oxide as an Electrocatalyst for the Oxygen Reduction Reaction

CHEMELECTROCHEM

ZHANG B, XIAO CH, XIANG Y, DONG BT, DING SJ, TANG YH

Application of three surface complexation models on U(VI) adsorption onto graphene oxide

CHEMICAL ENGINEERING JOURNAL

HU T, DING SJ, DENG HJ

Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device

JOURNAL OF NANOMATERIALS

LIU WJ, CHEN L, ZHOU P, SUN QQ, LU HL, DING SJ, ZHANG DW