国家/地区 Usa（5）
关键词
出版物 JOURNAL OF MATERIAL.（2）
出版时间 2016（6）
机构 NAVAL RES LA.（2）
作者 FRIEDMAN AL（6）

Homoepitaxial graphene tunnel barriers for spin transport

AIP ADVANCES

FRIEDMAN AL, VAN T ERVE OMJ, ROBINSON JT, WHITENER KE, JONKER BT

Electronic transport and localization in nitrogen-doped graphene devices using hyperthermal ion implantation

PHYSICAL REVIEW B

FRIEDMAN AL, CRESS CD, SCHMUCKER SW, ROBINSON JT, VAN T ERVE OMJ

Graphene and monolayer transition-metal dichalcogenides: properties and devices

JOURNAL OF MATERIALS RESEARCH

VAN T ERVE OMJ, HANBICKI AT, FRIEDMAN AL, MCCREARY KM, COBAS E, LI CH, ROBINSON JT, JONKER BT

Graphene and monolayer transition-metal dichalcogenides: properties and devices (vol 31, pg 845, 2016)

JOURNAL OF MATERIALS RESEARCH

VAN T ERVE OMJ, HANBICKI AT, FRIEDMAN AL, MCCREARY KM, COBAS E, LI CH, ROBINSON JT, JONKER BT

Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control

ACS NANO

CRESS CD, SCHMUCKER SW, FRIEDMAN AL, DEV P, CULBERTSON JC, LYDING JW, ROBINSON JT

Reducing flicker noise in chemical vapor deposition graphene field-effect transistors

APPLIED PHYSICS LETTERS

ARNOLD HN, SANGWAN VK, SCHMUCKER SW, CRESS CD, LUCK KA, FRIEDMAN AL, ROBINSON JT, MARKS TJ, HERSAM MC