国家/地区
关键词
出版物 SCIENTIFIC REPORTS（2）
出版时间 2016（2）
机构
作者 HWANG WS（2）

Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors (vol 6, 25392, 2016)

SCIENTIFIC REPORTS

SONG SM, BONG JH, HWANG WS, CHO BJ

Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors

SCIENTIFIC REPORTS

SONG SM, BONG JH, HWANG WS, CHO BJ