国家/地区 China（13） Usa（2）
关键词 FIELD EFFECT TRANSI.（2） GRAPHENE（2）
出版物 MATERIALS RESEARCH .（2）
出版时间 2016（15）
机构 CHINESE ACAD.（12）
作者 JIN Z（15）

Intrinsic carrier mobility extraction based on a new quasi-analytical model for graphene field-effect transistors

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WANG SQ, JIN Z, MUHAMMAD A, PENG SG, HUANG XN, ZHANG DY, SHI JY

Metal-Organic Framework-Induced Synthesis of Ultrasmall Encased NiFe Nanoparticles Coupling with Graphene as an Efficient Oxygen Electrode for a Rechargeable Zn-Air Battery

ACS CATALYSIS

ZHU JB, XIAO ML, ZHANG YL, JIN Z, PENG ZQ, LIU CP, CHEN SL, GE JJ, XING W

Realizing controllable graphene nucleation by regulating the competition of hydrogen and oxygen during chemical vapor deposition heating

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

ZHANG HR, ZHANG YQ, ZHANG YH, CHEN ZY, SUI YP, GE XM, DENG RX, YU GH, JIN Z, LIU XY

Abnormal Dirac point shift in graphene field-effect transistors

MATERIALS RESEARCH EXPRESS

WANG SQ, JIN Z, HUANG XN, PENG SG, ZHANG DY, SHI JY

Towards a cleaner graphene surface in graphene field effect transistor via N,N-Dimethylacetamide

MATERIALS RESEARCH EXPRESS

MAO DC, PENG SA, WANG SQ, ZHANG DY, SHI JY, WANG XN, JIN Z

The two timescales in the charge trapping mechanism for the hysteresis behavior in graphene field effect transistors

JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS

MAO DC, WANG SQ, PENG SA, ZHANG DY, SHI JY, HUANG XN, ASIF M, JIN Z

Surface-potential-based physical compact model for graphene field effect transistor

JOURNAL OF APPLIED PHYSICS

WANG LF, PENG SG, WANG W, XU GW, JI ZY, LU ND, LI L, JIN Z, LIU M

In Situ Thermal Synthesis of Inlaid Ultrathin MoS2/Graphene Nanosheets as Electrocatalysts for the Hydrogen Evolution Reaction

CHEMISTRY OF MATERIALS

MA LB, HU Y, ZHU GY, CHEN RP, CHEN T, LU HL, WANG YR, LIANG J, LIU HX, YAN CZ, TIE ZX, JIN Z, LIU J

Layered and scrolled nanocomposites with aligned semi-infinite graphene inclusions at the platelet limit

SCIENCE

LIU PW, JIN Z, KATSUKIS G, DRAHUSHUK LW, SHIMIZU S, SHIH CJ, WETZEL ED, TAGGARTSCARFF JK, QING B, VAN VLIET KJ, LI R, WARDLE BL, STRANO MS

Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance

CHINESE PHYSICS B

MAO DC, JIN Z, WANG SQ, ZHANG DY, SHI JY, PENG SA, WANG XY