国家/地区 China（4）
关键词
出版物
出版时间 2016（4）
机构 HEBEI SEMICOND RES INST（4）
作者 LI J（4）

High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate

CHINESE PHYSICS B

HE ZZ, YANG KW, YU C, LIU QB, WANG JJ, LI J, LU WL, FENG ZH, CAI SJ

Graphene Amplifier MMIC on SiC Substrate

IEEE ELECTRON DEVICE LETTERS

YU C, HE ZZ, LIU QB, SONG XB, XU P, HAN TT, LI J, FENG ZH, CAI SJ

Epitaxial Graphene on Sapphire Substrate by Chemical Vapor Deposition

ACTA PHYSICOCHIMICA SINICA

LIU QB, YU C, HE ZZ, WANG JJ, LI J, LU WL, FENG ZH

Quasi-free-standing bilayer epitaxial graphene field-effect transistors on 4H-SiC (0001) substrates

APPLIED PHYSICS LETTERS

YU C, HE ZZ, LI J, SONG XB, LIU QB, CAI SJ, FENG ZH