国家/地区 India（2） Spain（2）
关键词 FET（9）
出版物 IEEE TRANSACTIONS O.（3）
出版时间 2016（9）
机构 UNIV AUTONOM.（2）
作者 JIMENEZ D（2） PASADAS F（2）

Graphene Nanogrids FET Immunosensor: Signal to Noise Ratio Enhancement

SENSORS

BASU J, ROYCHAUDHURI C

Fabrication of few-layer graphene film based field effect transistor and its application for trace-detection of herbicide atrazine

ADVANCES IN NATURAL SCIENCESNANOSCIENCE NANOTECHNOLOGY

THI TC, VAN CN, HAI BN, HUNG TB, THI TV, NGOC HP, BACH TP, LE H, MAXIME B, MATTHIEU P, JEAN LS, NGOC MP, DAI LT

Development of field effect transistor based on single graphene ribbon prepared by a modified unzipping process of MWCNT

SYNTHETIC METALS

MAHMOUD WE, ALHAZMI FS, ALGHAMDI AA, SHOKR FS, BEALL GW

Large-Signal Model of Graphene Field-Effect Transistors-Part I: Compact Modeling of GFET Intrinsic Capacitances

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

Large-Signal Model of Graphene Field-Effect Transistors-Part II: Circuit Performance Benchmarking

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

Characterization of Graphene TFET for Subterahertz Oscillator

IEEE TRANSACTIONS ON ELECTRON DEVICES

MAO XR, HUANG BJ, ZHANG X, SUN NF, CHENG CT, GAN S, GENG ZX, CHEN HD

Photonic Frequency Double-Mixing Conversion Over the 120-GHz Band Using InP- and Graphene-Based Transistors

JOURNAL OF LIGHTWAVE TECHNOLOGY

SUGAWARA K, KAWASAKI T, TAMAMUSHI G, MASTURA H, DOBROIU A, YOSHIDA T, SUEMITSU T, FUKIDOME H, SUEMITSU M, RYZHII V, IWATSUKI K, KUWANO S, KANI JI, TERADA J, OTSUJI T

Graphene FET Gigabit ON-OFF Keying Demodulator at 96 GHz

IEEE ELECTRON DEVICE LETTERS

HABIBPOUR O, HE ZS, STRUPINSKI W, RORSMAN N, CIUK T, CIEPIELEWSKI P, ZIRATH H

Fabrication and Characterization of Graphene Field Effect Transistor: Study of Interfacial Effects for Device Reliability

JOURNAL OF NANO RESEARCH

PRASAD N, KUMARI A, BHATNAGAR PK, MATHUR PC